Green's function formalism for spin transport in metal-insulator-metal heterostructures

Metal-insulator-semiconductor heterostructures for plasmonic hot-carrier optoelectronics.

Plasmonic hot-electron devices are attractive candidates for light-energy harvesting and photodetection applications. For solid state devices, the most compact and straightforward architecture is the metal-semiconductor Schottky junction. However convenient, this structure introduces limitations such as the elevated dark current associated to thermionic emission, or constraints for device desig...

Stoichiometry-driven metal-to-insulator transition in NdTiO3/SrTiO3 heterostructures

Interface effects in spin-polarized metal/insulator layered structures

Recent advances in thin-film deposition techniques, such as molecular beam epitaxy and pulsed laser deposition, have allowed for the manufacture of heterostructures with nearly atomically abrupt interfaces. Although the bulk properties of the individual heterostructure components may be well-known, often the heterostructures exhibit novel and sometimes unexpected properties due to interface eff...

Spin valve effect across the metal-insulator transition in V2O3

The magnetoresistance of Ni/V2O3/Py devices shows interesting behavior in the temperature dependence across the V2O3 metal-insulator transition. A spin-valve effect ( 0.1%) is found below the transition temperature when V2O3 is in the insulating phase. Contrary to expectation, the spin-valve effect disappears when device is heated above 150 K and V2O3 is in the metallic state. At these temperat...

Magnetic and metal-insulator transitions in coupled spin-fermion systems

R. Mondaini,1,2 T. Paiva,3 and R. T. Scalettar2 1Physics Department, The Pennsylvania State University, 104 Davey Laboratory, University Park, Pennsylvania 16802, USA 2Physics Department, University of California, Davis, California 95616, USA 3Instituto de Fı́sica, Universidade Federal do Rio de Janeiro Cx.P. 68.528, 21941-972 Rio de Janeiro RJ, Brazil (Received 14 August 2014; published 14 Octo...